透明陶瓷晶圆片
Transparent Ceramic Wafers
产品规格
Product Specifications
|
直径 Diameter (inch) |
规格 Specifications |
厚度 Thickness (mm) |
|---|---|---|
| Ø4 ~ 12 |
双平口 / Notch口晶圆 double-flat / notch wafers |
≥ 0.3 |
*其他尺寸及开口可定制
Custom sizes and flat/notch configurations available
性能特点
Performance Characteristics
- 近紫外至中红外波长范围内透明性能优异 Excellent optical transparency from near-ultraviolet to mid-infrared wavelengths
- 高强度、高硬度、高刚性 High strength, high hardness, and high stiffness
- 高热导率 High thermal conductivity
- 低热膨胀系数 Low coefficient of thermal expansion
- 耐热和耐化学腐蚀 Heat resistance and chemical corrosion resistance
- 高电绝缘、低介电损耗 High electric insulation and low dielectric loss
- 加工性能显著优于蓝宝石，低残余应力 The machinability significantly superior to that of sapphire, with low residual stress
应用场景
Applications
- 晶圆载板 Wafer carriers
- SAW器件键合片 Wafer bonding substrates for SAW devices
- 光通信组件的基板 Substrates for optical communication devices
- 光电显示屏 Optoelectronic display screen
性能指标
Typical property parameters
| 项目 | 数值 |
|---|---|
| 杨氏模量 (GPa)Young's modulus | 300 |
| 泊松比Poisson's ratio | 0.26 |
| 弯曲强度 (MPa)Bending strength | 460 |
| 断裂韧性 (MPa·m1/2)Fracture toughness | 2.56 |
| 维氏硬度 (GPa)Vickers hardness | 16.05 |
| 比热容（@25°C）J/(g·°C)Specific heat capacity | 0.95 |
| 热导率（@25°C）W/(m·K)Thermal conductivity | 15.80 |
| 热膨胀系数（25-500°C）×10⁻⁶ K⁻¹Thermal expansion coefficient | 7.36 |
| 介电常数（@24-77GHz）Dielectric constant | 8.75 |
| 介电损耗（@24-77GHz）×10⁻⁴Dielectric loss | 2.90 |
| 介电强度 (kV/mm)Dielectric strength | 66.32 |
| 体积电阻率 (×1014 Ω·cm)Volume electrical resistivity | 1.62 |
| TTV (μm)Total thickness variation | < 5 |
| WARP (μm)Warp | < 30 |
| Sa (nm)Surface roughness | < 1 |
表面显微照片
Optical Microscope Image
本公司透明陶瓷晶圆片表面光学显微镜照片 ｜ The optical microscope image of the surface of the transparent ceramic wafer
